Title :
High performance wafer-bonded bottom-emitting 850 nm VCSELs on transparent substrates
Author :
Chao-Kun Lin ; Dapkus, P.D.
Author_Institution :
Center for Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Vertical-cavity surface-emitting lasers (VCSELs) are of great interest in this application because of their low cost fabrication, 2D integrable geometry, ultralow threshold current, and tight circular beam shape. We demonstrate high efficiency 850 nm bottom-emitting VCSELs on transparent undoped GaP and sapphire substrates.
Keywords :
laser beams; laser transitions; optical fabrication; semiconductor lasers; substrates; surface emitting lasers; transparency; wafer bonding; 2D integrable geometry; 850 nm; VCSELs; high efficiency 850 nm bottom-emitting VCSELs; high performance wafer-bonded bottom-emitting 850 nm VCSELs; low cost fabrication; sapphire substrates; tight circular beam shape; transparent substrates; transparent undoped GaP; ultralow threshold current; Chaotic communication; Coatings; Integrated circuit interconnections; Microprocessors; Photonics; Space technology; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wafer bonding;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794716
