DocumentCode
3182842
Title
GaN-based blue light emitting VCSELs and quantum dot lasers
Author
Arakawa, Y. ; Someya, T. ; Tachibana, K.
Author_Institution
Inst. of Ind. Sci., Tokyo Univ., Japan
fYear
1999
fDate
26-27 July 1999
Abstract
We discussed fabrication and room temperture operation of GaN nitride-based VCSELs and QD lasers. Current injection structures should be the next step for blue light emitting nanostructure/optoelectronic crystal lasers.
Keywords
III-V semiconductors; gallium compounds; nanostructured materials; optical fabrication; photonic band gap; quantum well lasers; semiconductor quantum dots; semiconductor technology; GaN; GaN-based blue light emitting VCSELs; QD lasers; blue light emitting nanostructure crystal lasers; current injection structures; nitride-based VCSELs; quantum dot lasers; room temperture operation; Electrons; Gallium nitride; Laser excitation; Pump lasers; Quantum dot lasers; Semiconductor lasers; Surface emitting lasers; Temperature; US Department of Transportation; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-5633-0
Type
conf
DOI
10.1109/LEOSST.1999.794721
Filename
794721
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