FET model statistics and their effects on design centering and yield prediction for microwave amplifiers

Author

Purviance, J. ; Criss, D. ; Monteith, D.

Author_Institution

Dept. of Electr. Eng., Idaho Univ., Moscow, ID, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

315

Abstract

The first- and second-order statistics for the model parameters of a 0.5- mu m GaAs FET are determined and then tested in a statistical circuit design and yield simulation. The purpose is to identify what statistical FET data is needed to statistically design a high-yield monolithic microwave integrated circuit (MMIC) amplifier. An example is used to identify which aspects of statistical circuit design are sensitive to the proper FET model statistics. It is shown that the design values are insensitive and the yield estimates are sensitive. The important issues in statistical circuit design are summarized and a discussion of the needed future works is given.<>

Keywords

III-V semiconductors; field effect integrated circuits; field effect transistors; gallium arsenide; microwave amplifiers; microwave integrated circuits; semiconductor device models; 500 nm; FET model statistics; GaAs; MMIC; design centering; design values; first order statistics; microwave amplifiers; model parameters; monolithic microwave integrated circuit; second-order statistics; semiconductor; statistical circuit design; yield estimates; yield prediction; yield simulation; Circuit simulation; Circuit synthesis; Circuit testing; FET integrated circuits; Gallium arsenide; Integrated circuit yield; MMICs; Microwave FETs; Statistical analysis; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22039

Filename

22039