Ultra-efficient X-band and linear-efficient Ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors

Author

Quach, T. ; Okamura, W. ; Gutierrez-Aitken, Augusto ; Jenkins, T. ; Kaneshiro, Eric ; Kehias, L. ; Sawdai, D. ; Watson, Paul ; Welch, Richard ; Worley, Rick ; Yen, H.C.

Author_Institution

Air Force Res. Lab., Wright-Patterson AFB, OH

fYear

2001

fDate

2001

Firstpage

501

Lastpage

504

Abstract

We report on an ultra-efficient circuit at X-band and a linear-efficient circuit at Ka-band using InP double heterojunction bipolar transistors (DHBTs). The high efficiency circuit employs a transmission line Class-E topology to achieve 61.1% PAE, 20.1-dBm output power, and 9.8-dB gain at 10 GHz. The linear efficient circuit combines four unit cells of 1.5 μm × 30 μm × 2 fingers that yielded 25.2 dBm output power, 8.4-dB linear gain, and 35.2% PAE at 28 GHz. This circuit also achieved 31 to 34 dBm output IP3

Keywords

III-V semiconductors; bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; microwave power amplifiers; 10 GHz; 28 GHz; 35.2 percent; 61.1 percent; 8.4 dB; 9.8 dB; InP; indium phosphide double heterojunction bipolar transistor; linear-efficient Ka-band circuit; power amplifier; transmission line class-E topology; ultra-efficient X-band circuit; Circuits; Costs; Double heterojunction bipolar transistors; Indium phosphide; Knee; Linearity; Power amplifiers; Power generation; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929189

Filename

929189