DocumentCode
3182868
Title
Transparent contact to p-GaN: indium tin oxide/titanium nitride
Author
Buchinsky, O. ; Margalith, T. ; Cohen, D.A. ; Abare, A.C. ; DenBaarst, S.P. ; Coldren, L.A.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1999
fDate
26-27 July 1999
Abstract
We demonstrate the possible use of TiN/ITO as an intracavity p-contact in GaN-based vertical light emitting devices. While having very low optical loss, it provides efficient current spreading and high current density carrying capacity.
Keywords
III-V semiconductors; MOCVD; current density; gallium compounds; light emitting devices; light emitting diodes; quantum well devices; GaN; GaN-based vertical light emitting devices; GaP-TiN-ITO; GaP-TiN-InSnO; TiN-ITO; TiN-InSnO; TiN/ITO; current density carrying capacity; efficient current spreading; intracavity p-contact; optical loss; p-GaN; transparent contact; vertical light emitting devices; Current density; Indium tin oxide; Light emitting diodes; Optical losses; Plasma temperature; Sputtering; Thermal conductivity; Titanium; Vertical cavity surface emitting lasers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-5633-0
Type
conf
DOI
10.1109/LEOSST.1999.794723
Filename
794723
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