Title :
Ground state lasing at 1.07 /spl mu/m from InGaAs/GaAs QD VCSEL
Author :
Zou, Z. ; Huffaker, D.L. ; Csutak, S. ; Shchekin, O.B. ; Graham, L.A. ; Deppe, D.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Presents data characterizing room-temperature, continuous-wave (CW) ground state lasing from a 1.07 /spl mu/m quantum dot (QD) VCSEL, and the luminescence characteristics from QDs confined in small oxide apertures. For the QD VCSEL, the threshold current of 703 /spl mu/A is obtained for a 10 /spl mu/m diameter oxide aperture using a three-stack active region, with the lasing wavelength of /spl sim/1.06 /spl mu/m. Threshold currents as low as 268 /spl mu/A are achieved from a 2 /spl mu/m square aperture VCSEL. The threshold conditions are discussed with an emphasis on the spontaneous and stimulated decay rates due to resonant excitation. For very small apertures that provide strong optical confinement, the spontaneous lifetime is altered due to the Purcell effect.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; ground states; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; photoluminescence; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1.06 mum; 1.07 mum; 10 mum; 2 mum; 268 muA; 298 K; 703 muA; InGaAs-GaAs; InGaAs/GaAs; Purcell effect; ground state lasing; lasing wavelength; luminescence characteristics; optical confinement; oxide aperture; quantum dot VCSEL; resonant excitation; room-temperature continuous-wave ground state lasing; small oxide apertures; spontaneous decay rates; spontaneous lifetime; square aperture VCSEL; stimulated decay rates; three-stack active region; threshold condition; threshold current; threshold currents; vertical cavity surface emitting laser; Apertures; Gallium arsenide; Indium gallium arsenide; Luminescence; Quantum dots; Resonance; Stationary state; Stimulated emission; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794724
