DocumentCode :
3182911
Title :
Negative differential resistance in trench-type narrow InGaAs quantum wire
Author :
Jang, Kee-Youn ; Sugaya, Keyoshi ; Matsumo, K. ; Shimizu, Toshiyuki ; Ogura, Mutsuo ; Sugiyama, Yoshinobu
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
fYear :
2001
fDate :
2001
Firstpage :
517
Lastpage :
520
Abstract :
A trench-type narrow InGaAs quantum-wire field-effect transistor (QWRFET) on a V-grooved (311)A InP substrate has been successfully fabricated. The trench-type InGaAs QWR-FET with 50 nm gate-length has demonstrated clear negative differential resistance (NDR) characteristics based on real space transfer (RST) with a high peak-to-valley current ratio (PVR=6.2) and a low onset voltage (VNDR) of 0.1 V. Such a low VNDR has not been reported before
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; negative resistance devices; quantum well devices; quantum wires; 50 nm; InGaAs; V-grooved (311)A InP substrate; negative differential resistance; onset voltage; peak-to-valley current ratio; real space transfer; trench-type InGaAs quantum wire field effect transistor; Atomic layer deposition; Electrons; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Particle scattering; Space technology; Substrates; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
ISSN :
1092-8669
Print_ISBN :
0-7803-6700-6
Type :
conf
DOI :
10.1109/ICIPRM.2001.929195
Filename :
929195
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3182911
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