Negative differential resistance in trench-type narrow InGaAs quantum wire

Author

Jang, Kee-Youn ; Sugaya, Keyoshi ; Matsumo, K. ; Shimizu, Toshiyuki ; Ogura, Mutsuo ; Sugiyama, Yoshinobu

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

fYear

2001

fDate

2001

Firstpage

517

Lastpage

520

Abstract

A trench-type narrow InGaAs quantum-wire field-effect transistor (QWRFET) on a V-grooved (311)A InP substrate has been successfully fabricated. The trench-type InGaAs QWR-FET with 50 nm gate-length has demonstrated clear negative differential resistance (NDR) characteristics based on real space transfer (RST) with a high peak-to-valley current ratio (PVR=6.2) and a low onset voltage (V_NDR) of 0.1 V. Such a low V_NDR has not been reported before

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; negative resistance devices; quantum well devices; quantum wires; 50 nm; InGaAs; V-grooved (311)A InP substrate; negative differential resistance; onset voltage; peak-to-valley current ratio; real space transfer; trench-type InGaAs quantum wire field effect transistor; Atomic layer deposition; Electrons; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Particle scattering; Space technology; Substrates; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929195

Filename

929195