GaAs HEMT lossy match amplifiers

Author

Ito, Y. ; Takeda, A.

Author_Institution

Tokyo Keiki Co. Ltd., Japan

fYear

1988

fDate

25-27 May 1988

Firstpage

347

Abstract

A design approach is described for hybrid lossy match amplifiers in the 1-13-GHz and 1-20-GHz bands, using 0.3- mu m-gate-length GaAs HEMTs (high-electron-mobility transistors). Two types of these two-stage lossy match amplifiers have been realized. One amplifier, using 0.3*280 mu m GaAs HEMTs, exhibits 14.0+or-0.4 dB gain, better than 10 dB return loss, and less than 7.8 dB noise figure over the 1-13-GHz band. The other amplifier, using 0.3*200 mu m GaAs HEMTs, shows 9.5+or-0.4 dB gain, better than 10 dB return loss, and less than 7.5 dB noise figure across the 1-20-GHz band.<>

Keywords

III-V semiconductors; field effect transistor circuits; gallium arsenide; high electron mobility transistors; hybrid integrated circuits; impedance matching; microwave amplifiers; solid-state microwave circuits; thin film circuits; wideband amplifiers; 1 to 20 GHz; 10 dB; 14 dB; 20 GHz; 280 micron; 300 nm; 7.8 dB; GaAs; HEMTs; SHF; design approach; high-electron-mobility transistors; hybrid lossy match amplifiers; semiconductors; thin film circuits; two-stage lossy match amplifiers; Bandwidth; Distributed amplifiers; Equivalent circuits; FETs; Gain; Gallium arsenide; HEMTs; Impedance; Microstrip; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22047

Filename

22047