Title :
Growth of low EPD InP crystals
Author :
Hirano, R. ; Noda, A.
Author_Institution :
Dept. of Compound Semicond. Mater., Nikko Mater. Co Ltd., Ibaraki, Japan
Abstract :
Dislocation free (DF) (EPD<500/cm2) S doped InP crystals have been grown by modified LEC method. 2-inch diameter InP crystals were grown by thermal baffle technology and 3-inch diameter crystals were grown by phosphorus vapor controlled LEC method (PC-LEC). The DF crystals become somewhat rectangular in shape and the faceting on the cylindrical part of the ingots takes place during the growth. To grow the single crystals with low EPD, it needs to use the stoichiometric polycrystals
Keywords :
III-V semiconductors; crystal growth from melt; dislocation etching; indium compounds; semiconductor growth; 2 inch; 3 inch; InP:S; LEC growth; S-doped InP single crystal; crystal faceting; dislocation-free crystal; etch pit density; phosphorus vapor controlled LEC method; stoichiometric polycrystal; thermal baffle technology; Crystals; Etching; Face detection; Indium phosphide; Microscopy; Pollution measurement; Semiconductor materials; Shape; Temperature; Tin;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929200
