• DocumentCode
    3183028
  • Title

    Growth of low EPD InP crystals

  • Author

    Hirano, R. ; Noda, A.

  • Author_Institution
    Dept. of Compound Semicond. Mater., Nikko Mater. Co Ltd., Ibaraki, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    529
  • Lastpage
    532
  • Abstract
    Dislocation free (DF) (EPD<500/cm2) S doped InP crystals have been grown by modified LEC method. 2-inch diameter InP crystals were grown by thermal baffle technology and 3-inch diameter crystals were grown by phosphorus vapor controlled LEC method (PC-LEC). The DF crystals become somewhat rectangular in shape and the faceting on the cylindrical part of the ingots takes place during the growth. To grow the single crystals with low EPD, it needs to use the stoichiometric polycrystals
  • Keywords
    III-V semiconductors; crystal growth from melt; dislocation etching; indium compounds; semiconductor growth; 2 inch; 3 inch; InP:S; LEC growth; S-doped InP single crystal; crystal faceting; dislocation-free crystal; etch pit density; phosphorus vapor controlled LEC method; stoichiometric polycrystal; thermal baffle technology; Crystals; Etching; Face detection; Indium phosphide; Microscopy; Pollution measurement; Semiconductor materials; Shape; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929200
  • Filename
    929200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3183028