Growth of S-doped 2" InP-crystals by the vertical gradient freeze technique

Author

Sahr, U. ; Grant, I. ; Muller, G.

Author_Institution

Crystal Growth Lab., Erlangen-Nurnberg Univ., Germany

fYear

2001

fDate

2001

Firstpage

533

Lastpage

536

Abstract

A VGF-furnace for the growth of high quality InP crystals was designed by the aid of numerical modelling with the software program CrysVUn++. In comparison to an earlier furnace set-up temperature fluctuations at the crucible wall could be reduced down to 0.03 K, S-doped crystals are grown and analysed by Hall-measurements and dislocation etching. The carrier concentration varies between 3-8·10¹⁷ cm^-3 and a dislocation density (EPD) below 2000 cm^-2 is reached

Keywords

Hall effect; III-V semiconductors; carrier density; crystal growth from melt; dislocation density; dislocation etching; indium compounds; semiconductor growth; sulphur; 2 in; CrysVUn++ software program; Hall effect; InP:S; S-doped InP crystal growth; VGF furnace; carrier concentration; crucible wall; dislocation density; dislocation etching; etch pit density; numerical model; temperature fluctuations; vertical gradient freeze technique; Crystals; Electronic mail; Furnaces; Indium phosphide; Numerical models; Resistance heating; Silicon compounds; Temperature; Thermal stresses; Water heating;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929201

Filename

929201