Ultra-low noise HEMT device models: application of on-wafer cryogenic noise analysis and improved parameter extraction techniques

Author

Bautista, J.J. ; Hamai, M. ; Nishimoto, Masahiko ; Laskar, J. ; Szydlik, P. ; Lai, Richard

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

935

Abstract

Significant advances in the development of HEMT technology have resulted in high performance cryogenic LNAs whose noise temperatures are within an order of magnitude of the quantum noise limit (hn/k). Key to the identification of optimum HEMT structures at cryogenic temperatures is the development of on-wafer noise and device parameter extraction techniques.<>

Keywords

S-parameters; cryogenic electronics; electric noise measurement; high electron mobility transistors; semiconductor device models; semiconductor device noise; semiconductor device testing; HEMT device models; cryogenic temperatures; onwafer cryogenic noise analysis; parameter extraction techniques; ultra-low noise models; Cryogenics; HEMTs; Microwave technology; Noise generators; Noise measurement; PHEMTs; Parameter extraction; Scattering parameters; Space technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405895

Filename

405895

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3183070