Title :
Ultra-low noise HEMT device models: application of on-wafer cryogenic noise analysis and improved parameter extraction techniques
Author :
Bautista, J.J. ; Hamai, M. ; Nishimoto, Masahiko ; Laskar, J. ; Szydlik, P. ; Lai, Richard
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Significant advances in the development of HEMT technology have resulted in high performance cryogenic LNAs whose noise temperatures are within an order of magnitude of the quantum noise limit (hn/k). Key to the identification of optimum HEMT structures at cryogenic temperatures is the development of on-wafer noise and device parameter extraction techniques.<>
Keywords :
S-parameters; cryogenic electronics; electric noise measurement; high electron mobility transistors; semiconductor device models; semiconductor device noise; semiconductor device testing; HEMT device models; cryogenic temperatures; onwafer cryogenic noise analysis; parameter extraction techniques; ultra-low noise models; Cryogenics; HEMTs; Microwave technology; Noise generators; Noise measurement; PHEMTs; Parameter extraction; Scattering parameters; Space technology; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405895
