Non-destructive characterization of heterointerfaces by depth-resolved cathodoluminescence and its application to InGaP/GaAs interface

Author

Ishikawa, Fumitaro ; Hasegawa, Hideki

Author_Institution

Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan

fYear

2001

fDate

2001

Firstpage

537

Lastpage

540

Abstract

A cathodoluminescence interface spectroscopy (CLIS) technique is proposed and applied to InGaP/GaAs multi-layer heterostructures as a contactless and non-destructive characterization method of buried multi-layer heterointerfaces. Plots of CL intensity vs. acceleration voltage are defined as CLIS spectra. A theoretical analysis of CLIS spectra was performed using the Everhart-Hoff electron energy loss curve. Experimentally, reference CLIS spectra were taken first on a well-characterized commercial high quality InGaP/GaAs wafer grown by MOVPE. Then the technique was applied to various InGaP/GaAs heterostructures and quantum wells grown on GaAs by GSMBE using TBP as the P source. Data on MOVPE grown HBT wafers are also presented and discussed

Keywords

III-V semiconductors; buried layers; cathodoluminescence; gallium arsenide; gallium compounds; indium compounds; semiconductor heterojunctions; Everhart-Hoff electron energy loss spectra; GSMBE growth; HBT wafer; InGaP-GaAs; InGaP/GaAs interface; MOVPE growth; buried multilayer heterointerface; cathodoluminescence interface spectroscopy; contactless nondestructive technique; depth-resolved cathodoluminescence; quantum well; Acceleration; Electrons; Energy loss; Epitaxial growth; Epitaxial layers; Gallium arsenide; Performance analysis; Spectroscopy; Utility programs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929203

Filename

929203