DocumentCode
3183207
Title
A comparison of gettering in single- and multicrystalline silicon for solar cells
Author
Sopori, B.L. ; Jastrzebski, L. ; Tan, T.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
1996
fDate
13-17 May 1996
Firstpage
625
Lastpage
628
Abstract
The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells
Keywords
crystal defects; elemental semiconductors; getters; impurities; rapid thermal annealing; semiconductor materials; silicon; solar cells; Si; gettering regions saturation; impurity gettering; impurity-defect interactions; multicrystalline silicon; rapid thermal annealing; single-crystal silicon; solar cells; thermal processing; Aluminum; Fabrication; Gettering; Hydrogen; Impurities; Photovoltaic cells; Semiconductor device modeling; Silicon; Temperature distribution; Ultrasonic imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location
Washington, DC
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.564206
Filename
564206
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