Title :
Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy
Author :
Shih, Ding-Kang ; Lin, Hao-Hsiung ; Song, Li-Wei ; Chu, Tso-Yu ; Yang, T.R.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed
Keywords :
Fourier transform spectra; Hall effect; III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; effective mass; indium compounds; infrared spectra; plasma deposited coatings; semiconductor epitaxial layers; semiconductor growth; Burstein-Moss effect; FTIR spectra; Hall effect; III-V semiconductor alloy; InAsN; InAsN film; InP(100) substrate; double crystal X-ray diffraction; electrical properties; electron effective mass; fundamental absorption edge; optical properties; plasma assisted gas source molecular beam epitaxy; structural properties; Electric variables measurement; Electron optics; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Optical films; Plasma measurements; Plasma properties; Plasma sources; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929209
