Title :
GaInNP: a novel material for electronic and optoelectronic applications
Author :
Tu, C.W. ; Hong, Y.G. ; André, R. ; Xin, H.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
Adding ~0.5% N to GaInP grown on GaAs results in near zero conduction band discontinuity, and, thus, GaInNP could be an ideal material for HBTs. Adding also ~0.5% N to GaP results in direct bandgap, and GaNP/GaP light-emitting diodes are demonstrated
Keywords :
III-V semiconductors; conduction bands; energy gap; gallium compounds; heterojunction bipolar transistors; indium compounds; light emitting diodes; GaInNP; conduction band discontinuity; direct bandgap; electronic material; heterojunction bipolar transistor; light emitting diode; optoelectronic material; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Plasma temperature; Radio frequency; Substrates; Surface emitting lasers; Valves;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929221
