Growth of InMnAsSb/InSb heterostructures with mid-infrared light-induced ferromagnetic properties

Author

Kanamura, M. ; Zhou, Y.K. ; Okumura, S. ; Asami, K. ; Nakajima, M. ; Harima, H. ; Asahi, H.

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Japan

fYear

2001

fDate

2001

Firstpage

599

Lastpage

602

Abstract

New diluted magnetic semiconductor InMnAsSb/InSb heterostructures were proposed and grown an InAs substrates by low-temperature molecular beam epitaxy. Raman scattering measurements show that InMnAsSb layer grown on InSb at 250°C has higher crystal quality than that grown at 280°C. Light-induced ferromagnetic order was observed, for the first time, when these samples were illuminated with the light of wavelengths longer than 2 μm. Corresponding to the Raman data, better light-induced ferromagnetic order was for the 250°C-grown samples. The long-term preservation of the ferromagnetic order was confirmed even after the light-off

Keywords

III-V semiconductors; Raman spectra; ferromagnetic materials; indium compounds; interface magnetism; manganese compounds; molecular beam epitaxial growth; photomagnetic effect; semiconductor growth; semiconductor heterojunctions; semimagnetic semiconductors; 2 micron; 250 C; 280 C; InAs substrate; InMnAsSb-InSb; InMnAsSb/InSb heterostructure; Raman scattering; crystal quality; diluted magnetic semiconductor; low temperature growth; mid-infrared light-induced ferromagnetic properties; molecular beam epitaxy; Buffer layers; Magnetic semiconductors; Molecular beam epitaxial growth; Photonic band gap; Physics; Plasma temperature; Raman scattering; Substrates; Time measurement; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929224

Filename

929224