InP membrane-based microlasers on silicon wafer: microdisks vs photonic crystal cavities

Author

Monat, C. ; Seassal, C. ; Rojo-Romeo, P. ; Letartre, X. ; Regreny, Ph ; Gendry, M. ; Viktorovitch, P. ; Hollinger, G. ; Jalaguier, E. ; Pocas, S. ; Aspar, B.

Author_Institution

LEOM, Ecole Centrale de Lyon, Ecully, France

fYear

2001

fDate

2001

Firstpage

603

Lastpage

606

Abstract

Microdisk and photonic crystal (PC) cavity lasers were fabricated on InP based heterostructures integrated on silicon wafers. Single InGaAs quantum well, multiple InGaAs quantum wells and InAs quantum wires are used as active layers. Laser emission is achieved on quantum well based microdisk and PC microcavities. A comparison is made between different combinations of microcavity shapes and active material

Keywords

III-V semiconductors; indium compounds; membranes; microcavity lasers; microdisc lasers; quantum well lasers; InAs; InAs quantum wire; InGaAs; InGaAs multiple quantum well; InGaAs single quantum well; InP; InP heterostructure; InP membrane microlaser; Si; active layer; microdisk laser; photonic crystal cavity laser; silicon wafer; Electrons; Indium gallium arsenide; Indium phosphide; Lithography; Optical films; Photonic crystals; Quantum well lasers; Silicon; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929226

Filename

929226