Title :
InP membrane-based microlasers on silicon wafer: microdisks vs photonic crystal cavities
Author :
Monat, C. ; Seassal, C. ; Rojo-Romeo, P. ; Letartre, X. ; Regreny, Ph ; Gendry, M. ; Viktorovitch, P. ; Hollinger, G. ; Jalaguier, E. ; Pocas, S. ; Aspar, B.
Author_Institution :
LEOM, Ecole Centrale de Lyon, Ecully, France
Abstract :
Microdisk and photonic crystal (PC) cavity lasers were fabricated on InP based heterostructures integrated on silicon wafers. Single InGaAs quantum well, multiple InGaAs quantum wells and InAs quantum wires are used as active layers. Laser emission is achieved on quantum well based microdisk and PC microcavities. A comparison is made between different combinations of microcavity shapes and active material
Keywords :
III-V semiconductors; indium compounds; membranes; microcavity lasers; microdisc lasers; quantum well lasers; InAs; InAs quantum wire; InGaAs; InGaAs multiple quantum well; InGaAs single quantum well; InP; InP heterostructure; InP membrane microlaser; Si; active layer; microdisk laser; photonic crystal cavity laser; silicon wafer; Electrons; Indium gallium arsenide; Indium phosphide; Lithography; Optical films; Photonic crystals; Quantum well lasers; Silicon; Substrates; Wafer bonding;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929226
