Title :
High speed optical fiber communication ICs based on InP HEMT
Author :
Murata, Koichi ; Enoki, Takatomo ; Yamane, Yasuro ; Sano, Eiichi
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
Abstract :
High-speed integrated circuit technology is the key to realizing large-capacity optical fiber communication systems. This paper describes the present status of 0.1-μm-gate InP HEMT ICs for the next-generation 40-Gbit/s/ch. systems. As an advanced IC technology, this paper also describes a 40-Gbit/s OEIC that is monolithically fabricated with a uni-traveling-carrier photodiode and the 0.1-μm InP HEMTs
Keywords :
HEMT integrated circuits; III-V semiconductors; high-speed integrated circuits; indium compounds; integrated optoelectronics; optical fibre communication; 0.1 micron; 40 Gbit/s; InP; InP HEMT; OEIC technology; high-speed integrated circuit; monolithic fabrication; optical fiber communication; uni-traveling-carrier photodiode; HEMTs; High speed integrated circuits; Indium compounds; Indium phosphide; Integrated circuit technology; Monolithic integrated circuits; Optical amplifiers; Optical fiber communication; Optical receivers; Optoelectronic devices;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929228
