Title :
A Study of Snapback and Parasitic Bipolar Action for ESD NMOS Modeling
Author :
Jia, Lu ; Yuxi, Jiang ; Yang, Dian ; Feng, Ran
Author_Institution :
Key Lab. of Adv. Display & Syst. Applic., Shanghai Univ., Shanghai
Abstract :
A study has been done on the snapback and parasitic bipolar action for modeling ESD NMOS in this paper. A DC model for ESD NMOS is provided, which includes a MOS transistor extracted from BSIM 3V3, a bipolar transistor for parasitic effect, substrate resistance and series resistance. Equations for modeling the high current behavior of NMOS transistor have been developed. Extraction methodology for obtaining the bipolar parameters is given. Simulation results are presented and compared to the testing data for 0.6 um NMOS.
Keywords :
MOSFET; bipolar transistors; electric resistance; semiconductor device models; BSIM 3V3; DC model; ESD NMOS modeling; NMOS transistor; bipolar transistor; parasitic bipolar action; parasitic effect; series resistance; size 0.6 mum; snapback bipolar action; substrate resistance; Circuit simulation; Data mining; Electrostatic discharge; Equations; MOS devices; MOSFETs; Protection; Region 1; Stress; Voltage;
Conference_Titel :
High Density packaging and Microsystem Integration, 2007. HDP '07. International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-1252-8
Electronic_ISBN :
1-4244-1253-6
DOI :
10.1109/HDP.2007.4283641
