DocumentCode :
3183632
Title :
High reliability of 0.1 μm InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates
Author :
Chou, Y.C. ; Leung, D. ; Scarpulla, J. ; Lai, R. ; Barsky, M. ; Grundbacher, R. ; Nishimoto, M. ; Liu, P.H. ; Streit, D.C.
Author_Institution :
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
fYear :
2001
fDate :
2001
Firstpage :
618
Lastpage :
621
Abstract :
The high-reliability performance of K-band MMIC amplifiers fabricated with 0.1 μm gate length InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process technology is reported. Operating at an accelerated life test condition of Vds=1.5 V and Ids=150 mA/mm, two-stage balanced amplifiers were life tested at two-temperatures (T1=230°C, and T2=250°C) in nitrogen ambient. The activation energy (Ea) is as high as 1.5 eV, achieving a projected median-time-to-failure (MTF)>1×106 hours at a 125°C junction temperature. MTF was determined by 2T constant current stress using |ΔS21|>1.0 dB as the failure criteria. This is the first report of high reliability 0.1 μm InGaAs/InAlAs/InP HEMT MMICs based on small-signal microwave characteristics. This result demonstrates a reliable InGaAs/InAlAs/InP HEMT production technology
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; differential amplifiers; failure analysis; field effect MMIC; gallium arsenide; indium compounds; integrated circuit reliability; life testing; 0.1 micron; 125 C; 230 C; 250 C; 2T constant current stress; 3 inch; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT MMIC; InP; InP substrate; K-band; accelerated life testing; activation energy; junction temperature; median-time-to-failure; process technology; reliability; small-signal microwave characteristics; two-stage balanced amplifier; volume production; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; K-band; Life estimation; Life testing; MMICs; Nitrogen; Production;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
ISSN :
1092-8669
Print_ISBN :
0-7803-6700-6
Type :
conf
DOI :
10.1109/ICIPRM.2001.929231
Filename :
929231
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3183632
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