Title :
V-band MMIC LNA using superlattice-inserted InP heterojunction FETs
Author :
Fujihara, A. ; Miyamoto, H. ; Yamanoguchi, K. ; Mizuki, E. ; Samoto, N. ; Tanaka, S.
Author_Institution :
Photonic & Wireless Device Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This paper presents a V-band MMIC low-noise amplifier (LNA) using InP-based heterojunction FETs (HJFETs). While the HJFET utilizes an AlAs/InAs superlattice as well as non-alloyed ohmic contacts for improved reliability, we show that with appropriate epitaxial layer design these device structures do not lead to increase in the source resistance. The three-stage coplanar waveguide circuit design demonstrated a state-of-the-art noise figure of 2.0 dB with 22.1 dB gain at 60 GHz
Keywords :
III-V semiconductors; JFET integrated circuits; MMIC amplifiers; coplanar waveguide components; field effect MMIC; indium compounds; semiconductor superlattices; 2.0 dB; 22.1 dB; 60 GHz; AlAs-InAs; AlAs/InAs superlattice insertion; InP; InP heterojunction FET; V-band MMIC low-noise amplifier; coplanar waveguide circuit; epitaxial layer; gain; noise figure; nonalloyed ohmic contact; reliability; source resistance; Contact resistance; Coplanar waveguides; Epitaxial layers; FETs; Heterojunctions; Indium phosphide; Low-noise amplifiers; MMICs; Ohmic contacts; Superlattices;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929233
