DocumentCode
3184262
Title
Mode formation in 1.3 μm GaInNAs VCSELs with unequal well filling
Author
Othman, Marini ; Tastavridis, K. ; Yong, J.C.L. ; Rorison, J.M.
Author_Institution
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
fYear
2003
fDate
22-27 June 2003
Firstpage
26
Abstract
We report on the dynamics of the mode formation in a vertical cavity surface emitting laser (VCSEL). The work covers both the averaged and unequal filling (and hence gain) of the quantum wells.
Keywords
II-VI semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; quantum well lasers; surface emitting lasers; 1.3 mum; GaInNAs; GaInNAs VCSEL; mode formation; quantum wells; unequal well filling; vertical cavity surface emitting laser; Difference equations; Eigenvalues and eigenfunctions; Filling; Laser modes; Nonlinear equations; Quantum well lasers; Refractive index; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2003. EQEC '03. European
Print_ISBN
0-7803-7733-8
Type
conf
DOI
10.1109/EQEC.2003.1313883
Filename
1313883
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