DocumentCode :
3184495
Title :
Optimized SRAM cell design for high speed and low power applications
Author :
Kumar, Anand ; Shalini, Shalini ; Khan, Imran Ahmed
Author_Institution :
Deptt of Electron. & Commun., Galgotia Coll. of Eng. & Technol., Noida, India
fYear :
2011
fDate :
11-14 Dec. 2011
Firstpage :
1357
Lastpage :
1362
Abstract :
In this paper, we have proposed a new SRAM cell architecture which consists of an asymmetric inverter pair to reduce the power consumption. In this work, we reduced the power and delay during write operation by a significant amount. However the area will be increased slightly. The average power consumption in SRAM cell is reduced by about 65.50% during a write operation and reduction in write delay is 63%. This SRAM is applicable to the areas where high speed and low power operation is required, especially in battery operated products like mobile phones and laptops etc.
Keywords :
SRAM chips; circuit optimisation; integrated circuit design; logic gates; low-power electronics; SRAM cell design; asymmetric inverter; high speed application; low power application; Computer architecture; Delay; Inverters; Microprocessors; Power demand; Random access memory; Transistors; 9T SRAM Cell; delay; power consumption; read and write operation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information and Communication Technologies (WICT), 2011 World Congress on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-0127-5
Type :
conf
DOI :
10.1109/WICT.2011.6141446
Filename :
6141446
Link To Document :
بازگشت