DocumentCode :
3185039
Title :
A GaN HEMT Doherty amplifier with a series connected load
Author :
Kawai, Satoshi ; Takayama, Yoichiro ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Chofu, Japan
fYear :
2009
fDate :
7-10 Dec. 2009
Firstpage :
325
Lastpage :
328
Abstract :
Doherty introduced two types of concepts for high-efficiency amplifiers in 1936. One involved a shunt connected load and the other involved a series connected load. The first one is well known. We propose a microwave Doherty power amplifier with a series connected load using baluns. A 1.9 GHz GaN HEMT Doherty power amplifier was designed and fabricated. At 24 dBm middle and 31 dBm saturated output powers, the amplifier realized improved power efficiencies of 31% and 56%, respectively, compared to power efficiencies of 15% at 24 dBm output power and 57% at 34 dBm saturated power, respectively, obtained with a reference push-pull amplifier.
Keywords :
gallium compounds; high electron mobility transistors; power amplifiers; GaN; HEMT Doherty power amplifier; efficiency 15 percent; efficiency 31 percent; efficiency 56 percent; efficiency 57 percent; frequency 1.9 GHz; microwave Doherty power amplifier; series connected load; FETs; Gallium nitride; HEMTs; High power amplifiers; Impedance matching; Microwave amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Doherty amplifier; GaN HEMT; balun; carrier amplifier; microwave power amplifiers; peak amplifier; series connected load type;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
Type :
conf
DOI :
10.1109/APMC.2009.5385313
Filename :
5385313
Link To Document :
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