A GaN HEMT Doherty amplifier with a series connected load

Author

Kawai, Satoshi ; Takayama, Yoichiro ; Ishikawa, Ryo ; Honjo, Kazuhiko

Author_Institution

Univ. of Electro-Commun., Chofu, Japan

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

325

Lastpage

328

Abstract

Doherty introduced two types of concepts for high-efficiency amplifiers in 1936. One involved a shunt connected load and the other involved a series connected load. The first one is well known. We propose a microwave Doherty power amplifier with a series connected load using baluns. A 1.9 GHz GaN HEMT Doherty power amplifier was designed and fabricated. At 24 dBm middle and 31 dBm saturated output powers, the amplifier realized improved power efficiencies of 31% and 56%, respectively, compared to power efficiencies of 15% at 24 dBm output power and 57% at 34 dBm saturated power, respectively, obtained with a reference push-pull amplifier.

Keywords

gallium compounds; high electron mobility transistors; power amplifiers; GaN; HEMT Doherty power amplifier; efficiency 15 percent; efficiency 31 percent; efficiency 56 percent; efficiency 57 percent; frequency 1.9 GHz; microwave Doherty power amplifier; series connected load; FETs; Gallium nitride; HEMTs; High power amplifiers; Impedance matching; Microwave amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Doherty amplifier; GaN HEMT; balun; carrier amplifier; microwave power amplifiers; peak amplifier; series connected load type;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5385313

Filename

5385313