Title :
Thin-film resonator ladder filter
Author :
Mang, L. ; Hickernell, E. ; Pennell, R. ; Hickernell, T.
Author_Institution :
Corp. Res. Lab., Motorola Inc., Phoenix, AZ, USA
Abstract :
Thin-film bulk acoustic wave resonator (BAWR) ladder filters have been realized with IL/spl sim/2.2 dB, and selectivity /spl sim/15 dB for a three resonator filter, IL/spl sim/5 dB and selectivity /spl sim/32 dB for a five resonator filter. Filters with seven and nine resonators have also been characterized. This performance corresponds to achieving a figure of merit Q/r/spl sim/10. The performance possibilities of ladder filters have been calculated with the Q/r figure of merit as a parameter. It is anticipated with improvements in processing and device designs, AlN or ZnO thin-film BAWR ladder filters should achieve IL/spl sim/1.5 dB and selectivity /spl sim/40 dB, corresponding to Q/r/spl sim/40 at 1.5 GHz.<>
Keywords :
UHF filters; bulk acoustic wave devices; ladder filters; passive filters; resonator filters; thin film devices; 1.5 GHz; AlN; BAW resonator filters; UHF filters; ZnO; bulk acoustic wave resonator; thin-film resonator ladder filter; Acoustic waves; Band pass filters; Bandwidth; Fabrication; Frequency; Insertion loss; Resonator filters; Thin film circuits; Transistors; Zinc oxide;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405905
