Title :
Design of a low-noise, radiation-hardened charge preamplifier
Author :
Wurtz, L.T. ; Wheless, W.P.
Author_Institution :
Electr. Eng. Dept., Alabama Univ., Tuscaloosa, AL, USA
Abstract :
A high-performance, low-noise charge preamplifier integrated circuit has been designed and tested for the Superconducting Super Collider. The amplifier is fabricated in a new dielectrically-isolated (DI), radiation-hardened, VHF BIFET IC process technology. This process provides NPN, PNP, and P-channel JFET (junction FET) devices which are radiation-hardened, tested to 3 Mrad of total gamma-ray exposure and 3 × 1014/cm2 neutron dosage, and provide high-frequency performance. The new charge preamplifier provides improved performance with an output rise time of 65 ns, input inferred noise of 28.6 μV, or 3575 electrons, and power dissipation less than 33.7 mW. The circuit design is discussed with attention given to the design characteristics that are needed to specifically accommodate low noise with the new radiation-hardened process
Keywords :
VHF devices; bipolar integrated circuits; field effect integrated circuits; integrated circuit technology; preamplifiers; radiation hardening (electronics); 33.7 mW; NPN devices; P-channel JFET; PNP devices; Superconducting Super Collider; VHF BIFET IC process technology; circuit design; dielectrically isolated technology; gamma-ray exposure; high-frequency performance; input inferred noise; junction FET; low noise preamplifier; neutron dosage; output rise time; power dissipation; radiation-hardened charge preamplifier; Circuit noise; Circuit testing; Dielectrics; Integrated circuit technology; Integrated circuit testing; Josephson junctions; Preamplifiers; Superconducting device noise; Superconducting integrated circuits; VHF circuits;
Conference_Titel :
Southeastcon '93, Proceedings., IEEE
Conference_Location :
Charlotte, NC
Print_ISBN :
0-7803-1257-0
DOI :
10.1109/SECON.1993.465735
