DocumentCode
3185475
Title
A multi-line de-embedding technique for mm-wave CMOS circuits
Author
Takayama, Naoki ; Matsushita, Kouta ; Ito, Shogo ; Li, Ning ; Bunsen, Keigo ; Okada, Kenichi ; Matsuzawa, Akira
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2009
fDate
7-10 Dec. 2009
Firstpage
143
Lastpage
146
Abstract
This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 1¿.
Keywords
CMOS integrated circuits; S-parameters; coplanar transmission lines; field effect MIMIC; strip lines; capacitor; characteristic impedance; coplanar strip line; different-length transmission lines; inductor; mm-wave CMOS circuits; multi-line de-embedding technique; on-chip S-parameter measurements; other-type DUTs; parasitic-component model; transistor; CMOS technology; Capacitors; Distributed parameter circuits; Frequency measurement; Impedance; Inductors; Scattering parameters; Semiconductor device modeling; Transmission line measurements; Transmission lines; De-embedding; RF CMOS; S-parameter measurement; Transmission Line; mm-wave;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location
Singapore
Print_ISBN
978-1-4244-2801-4
Electronic_ISBN
978-1-4244-2802-1
Type
conf
DOI
10.1109/APMC.2009.5385333
Filename
5385333
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