• DocumentCode
    3185475
  • Title

    A multi-line de-embedding technique for mm-wave CMOS circuits

  • Author

    Takayama, Naoki ; Matsushita, Kouta ; Ito, Shogo ; Li, Ning ; Bunsen, Keigo ; Okada, Kenichi ; Matsuzawa, Akira

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2009
  • fDate
    7-10 Dec. 2009
  • Firstpage
    143
  • Lastpage
    146
  • Abstract
    This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 1¿.
  • Keywords
    CMOS integrated circuits; S-parameters; coplanar transmission lines; field effect MIMIC; strip lines; capacitor; characteristic impedance; coplanar strip line; different-length transmission lines; inductor; mm-wave CMOS circuits; multi-line de-embedding technique; on-chip S-parameter measurements; other-type DUTs; parasitic-component model; transistor; CMOS technology; Capacitors; Distributed parameter circuits; Frequency measurement; Impedance; Inductors; Scattering parameters; Semiconductor device modeling; Transmission line measurements; Transmission lines; De-embedding; RF CMOS; S-parameter measurement; Transmission Line; mm-wave;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2009. APMC 2009. Asia Pacific
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-2801-4
  • Electronic_ISBN
    978-1-4244-2802-1
  • Type

    conf

  • DOI
    10.1109/APMC.2009.5385333
  • Filename
    5385333