DocumentCode :
3185475
Title :
A multi-line de-embedding technique for mm-wave CMOS circuits
Author :
Takayama, Naoki ; Matsushita, Kouta ; Ito, Shogo ; Li, Ning ; Bunsen, Keigo ; Okada, Kenichi ; Matsuzawa, Akira
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2009
fDate :
7-10 Dec. 2009
Firstpage :
143
Lastpage :
146
Abstract :
This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 1¿.
Keywords :
CMOS integrated circuits; S-parameters; coplanar transmission lines; field effect MIMIC; strip lines; capacitor; characteristic impedance; coplanar strip line; different-length transmission lines; inductor; mm-wave CMOS circuits; multi-line de-embedding technique; on-chip S-parameter measurements; other-type DUTs; parasitic-component model; transistor; CMOS technology; Capacitors; Distributed parameter circuits; Frequency measurement; Impedance; Inductors; Scattering parameters; Semiconductor device modeling; Transmission line measurements; Transmission lines; De-embedding; RF CMOS; S-parameter measurement; Transmission Line; mm-wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
Type :
conf
DOI :
10.1109/APMC.2009.5385333
Filename :
5385333
Link To Document :
بازگشت