Title :
Non-toxic liquid metal microstrip resonators
Author :
Liu, Xiaoguang ; Katehi, Linda P B ; Peroulis, Dimitrios
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
Abstract :
In this paper, we report for the first time the design and fabrication of non-toxic liquid metal (Galinstan) half-wavelength (¿g/2) microstrip resonator. Patterning techniques of Galinstan microstrip resonators are presented. Resonators of different lengths are measured to cover a frequency range of 3-20 GHz. We have characterized the conductivity of Galinstan by matching the measured quality factor with finite element model of the resonators. The conductivity of Galinstan is found to be 3.83 ± 0.16 à 106 S/m. The liquid metal holds great promises as a low contact resistance, highly reliable, high temperature tolerant material. This work will benefit future implementations of Galinstan based RF/Microwave reconfigurable devices and systems with high reliability.
Keywords :
Q-factor; finite element analysis; liquid metals; micromechanical devices; microstrip resonators; microwave devices; Galinstan microstrip resonators; MEMS device; RF/microwave reconfigurable devices; finite element model; frequency 3 GHz to 20 GHz; frequency range; half-wavelength microstrip resonator; non-toxic liquid metal; patterning techniques; quality factor; Conductivity measurement; Contact resistance; Electrical resistance measurement; Fabrication; Finite element methods; Frequency measurement; Length measurement; Materials reliability; Microstrip resonators; Q factor; Galinstan; liquid metal; microstrip resonator;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5385336