Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

In this paper, short channel effects of the sub-100nm modified symmetric double-gate MOSFET that made of dual material gates and oxide stack with high-k material on top of a SiO₂ layer examined and compared with conventional symmetric double-gate MOSFET using two-dimensional (2-D) simulation. This structure reduces short channel effects (SCEs) such as drain-induced barrier lowering (DIBL), hot electron effect and threshold voltage roll-off and has better current characteristics when compared to the conventional double-gate MOSFET.