Title :
Charge carrier transport in SiC Schottky interfaces: Shape factor approach
Author :
Kurel, Raido ; Rang, Toomas ; Rang, Galina ; Kasemaa, Argo
Author_Institution :
Tallinn Univ. of Technol., Tallinn
Abstract :
Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under influence of the change of parameters like impurity concentration, barrier height and ambient temperature is discussed. Unified handling methodology has been demonstrated.
Keywords :
Schottky barriers; Schottky effect; carrier density; silicon compounds; wide band gap semiconductors; SiC; ambient temperature; barrier height; charge carrier transport; impurity concentration; shape factor; silicon carbide Schottky interfaces; Charge carriers; Chemical technology; Current density; Electron mobility; Equations; Impurities; Semiconductor materials; Shape; Silicon carbide; Temperature;
Conference_Titel :
Electronics Conference, 2008. BEC 2008. 11th International Biennial Baltic
Conference_Location :
Tallinn
Print_ISBN :
978-1-4244-2059-9
Electronic_ISBN :
1736-3705
DOI :
10.1109/BEC.2008.4657484
