V-band monolithic power MESFET amplifiers

Author

Hegazi, G. ; Hung, H.-L. ; Phelleps, F. ; Holdeman, L. ; Cornfeld, A. ; Smith, T. ; Allison, J. ; Huang, H.

Author_Institution

COMSAT Lab., Clarksburg, MD, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

409

Abstract

Monolithic GaAs power amplifiers developed for V-band applications are described. A single-stage amplifier provided >4-dB gain from 50 to 56 GHz, with output power of 95 mW and a power-added efficiency of 11% at 55 GHz. A cascaded amplifier achieved 16.2-dB gain and output power of 85 mW. An optimized device structure together with computer-aided design (CAD) programs resulted in the use of MESFETs with larger gate width than those previously reported, achieving the high-output-power monolithic circuits from the initial design. Built-in, DC-blocking capacitors and bias networks allowed the cascading of these MMICs, providing usable power gain with stable operation.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; power amplifiers; 11 percent; 16.2 dB; 4 dB; 50 to 56 GHz; 85 mW; 95 mW; CAD; DC-blocking capacitors; EHF; GaAs; III-V semiconductors; MM-wave circuits; MMICs; V-band; bias networks; cascaded amplifier; computer-aided design; microwave IC; millimetre-wave operation; monolithic circuits; power MESFET amplifiers; single-stage amplifier; stable operation; Application software; Capacitors; Circuits; Design automation; Design optimization; Gallium arsenide; MESFETs; MMICs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22062

Filename

22062