Title :
A 16 W pulsed X-band solid-state transmitter
Author :
Peignet, C. ; Mancuso, Y. ; Le Meur, G. ; Remiro, L. ; Bert, A. ; Jouen, J.F. ; Savary, P.
Author_Institution :
Thomson-CSF/RCM, Malakoff, France
Abstract :
A description is given of several low-, medium-, and high-power X-band variable-gain amplifiers. Each amplifier design is based on a modular approach. The elementary module used is a 3-W FET chip and two tuning capacitors manufactured on a 100- mu m-thickness high-dielectric-constant substrate ( epsilon /sub r/=37). 6-W and 12-W amplification stages are realized by combining two or four elementary modules. These are combined for a 16-W transmitter. The most appropriate microwave technology has been selected for each power level: MMICs, MHMICs (miniature hybrid microwave circuits), or high-dielectric-constant circuits.<>
Keywords :
field effect integrated circuits; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; transmitters; 3 to 16 W; FET chip; MHMICs; MMICs; X-band; airborne radar; high power type; high-dielectric-constant circuits; low power type; medium power type; microwave IC; miniature hybrid microwave circuits; phased arrays; solid-state transmitter; tuning capacitors; variable-gain amplifiers; Appropriate technology; Capacitors; Dielectric substrates; High power amplifiers; Manufacturing; Microwave FETs; Microwave circuits; Microwave technology; Pulse amplifiers; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22064
