Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method

Author

Zhu, Furong ; Kohara, Hajime ; Fuyuki, Takashi ; Matsunami, Hiroyuki

Author_Institution

Dept. of Electr. Eng., Kyoto Univ., Japan

fYear

1996

fDate

13-17 May 1996

Firstpage

709

Lastpage

712

Abstract

Polycrystalline silicon (Si) films for solar cells have been deposited on both Si and foreign substrates by the plasma enhanced chemical vapour deposition (PECVD) method. Structural properties of Si films were characterised by X-ray diffraction (XRD) and Raman scattering measurements. Optical constants of Si films were calculated using the optical admittance method. The crystallinity of the films at different temperatures is investigated. Results reveal that over 90% of the Si was in a polycrystalline structure in the films when the deposition temperature was over 800°C

Keywords

Raman spectroscopy; X-ray diffraction; crystal structure; elemental semiconductors; optical constants; plasma CVD; plasma CVD coatings; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; solar cells; PECVD method; Raman scattering measurements; Si; X-ray diffraction; film crystallinity; foreign substrates; optical admittance method; optical constants; optical properties; plasma enhanced chemical vapour deposition; polycrystalline silicon thin films; structural properties; Optical films; Optical scattering; Photovoltaic cells; Plasma chemistry; Plasma measurements; Plasma properties; Plasma temperature; Plasma x-ray sources; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564228

Filename

564228