A 900 MHz CMOS RF power amplifier with digitally controllable output power

Author

Yoon, Jin-Han ; No, Ju-Young ; Lee, Kwang-Hee ; Son, Sang-Flee

Author_Institution

Chong-ju Univ., Chongju, South Korea

Volume

2

fYear

2002

fDate

28-31 Oct. 2002

Firstpage

1138

Abstract

A 900 MHz CMOS power amplifier with digitally controllable output has been designed using 0.6 μm, standard CMOS process. The designed power amplifier has a 4 nH load of integrated spiral inductor and composed of digitally controllable switch-mode pre-amplifiers and class-C output stage. Especially, the Q-enhancement circuit compensates low Q of integrated spiral inductor and is operating as cascade amplifier, also. The output power of the designed amplifier can be controlled from 3 dBm to 135 dBm using the proposed power control method. Under 3 V power supply voltage, the maximum PAE (power added efficiency) is 55% at 900 MHz input frequency.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; digital control; integrated circuit layout; power control; transceivers; 0.6 micron; 3 V; 900 MHz; CMOS RF power amplifier; Q-enhancement circuit; cascode amplifier; class-C output stage; digitally controllable output power; integrated spiral inductor; power added efficiency; power supply voltage; switch-mode pre-amplifiers; CMOS process; Circuits; Digital control; Inductors; Power amplifiers; Power generation; Process design; Radio frequency; Radiofrequency amplifiers; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON '02. Proceedings. 2002 IEEE Region 10 Conference on Computers, Communications, Control and Power Engineering

Print_ISBN

0-7803-7490-8

Type

conf

DOI

10.1109/TENCON.2002.1180325

Filename

1180325