DocumentCode :
3186597
Title :
Single-crystal Si infrared improvements
Author :
Kuznicki, Z.T. ; Wu, L. ; Christoffel, E.
Author_Institution :
Lab. PHASE, CNRS, Strasbourg, France
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
713
Lastpage :
716
Abstract :
Previous modeling and experiments have demonstrated that a considerable increase in Si single-crystal single-junction solar cell performance should be possible in the infrared range with a buried amorphized substructure such as an L-H complex interface inserted in the cell emitter. We analyze the activity of the main post-implantation defects, namely divacancies and band-tails, in a buried nanolayer in the presence of an active interface. The infrared carrier generation has been investigated on specially designed samples which contain flat-pearly shaped amorphized layers buried near the textured front face. Particularly, a shift of the divacancy activity band in the local strain field has been observed. The 1800 nm divacancy infrared band activity has revealed a totally unknown behavior in a built-in strain field of the inserted a-Si/c-Si hetero-interface. A relatively important infrared current could be observed experimentally up to 2500 nm
Keywords :
absorption; amorphous semiconductors; elemental semiconductors; p-n heterojunctions; silicon; solar cells; vacancies (crystal); 1800 to 2500 nm; L-H complex interface; Si; Si single-crystal single-junction solar cell; active interface; band-tails; built-in strain field; buried amorphized substructure; buried nanolayer; cell emitter; divacancies; divacancy activity band shift; flat-pearly shaped amorphized layers; infrared carrier generation; infrared current; inserted a-Si/c-Si hetero-interface; local strain field; post-implantation defects; single-crystal Si infrared improvements; solar cell performance improvement; textured front face; Amorphous materials; Annealing; Capacitive sensors; Electromagnetic wave absorption; Infrared spectra; Photovoltaic cells; Solar power generation; Tail; Temperature; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564229
Filename :
564229
Link To Document :
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