Title :
Heavy ion, proton and Co-60 radiation evaluation of 16 Mbit DRAM memories for space application
Author :
Harboe-Sorensen, R. ; Mülle, R. ; Fraenkel, S.
Author_Institution :
Eur. Space Res. & Technol. Centre, Noordwijk, Netherlands
Abstract :
This paper presents the results of a heavy ion, proton and Co-60 radiation evaluation programme carried out on a large number of current available 16 Mbit DRAMs. Testing issues, results obtained and recommendations are given for 15 difference DRAM types representing 8 manufacturers
Keywords :
DRAM chips; errors; failure analysis; gamma-ray effects; integrated circuit reliability; integrated circuit testing; ion beam effects; proton effects; space vehicle electronics; 16 Mbit; Co; Co-60 radiation evaluation; DRAM memories; Mbit memories; dynamic RAM; heavy ion effects; proton effects; space application; testing; Assembly; Content addressable storage; Error correction codes; Manufacturing; Packaging; Protons; Random access memory; Solid state circuits; Space missions; System testing;
Conference_Titel :
Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE
Conference_Location :
Madison, WI
Print_ISBN :
0-7803-3100-1
DOI :
10.1109/REDW.1995.483375
