Oxidation Process and Different Crystallographic Plane Orientation Dependence Simulation in Micro and Nano Scale Structures

Author

Andriukaitis, Darius ; Anilionis, Romualdas

Author_Institution

Kaunas Univ. of Technol., Kaunas

fYear

2007

fDate

25-28 June 2007

Firstpage

573

Lastpage

578

Abstract

Thermal oxidation is one of various methods used for neighboring element isolation. Problems of thermal oxidation, related with LOCOS, PBL and SWAMI technologies was researched. The main purpose of this paper is to present stress, which appears during thermal oxidation in micro and nano scales levels in mentioned above technologies. Also relationship between thermal oxidation and crystallographic planes orientation are analyzed, because growing oxide rate is different on surface and edges with the same crystallographic planes orientation. Thermal oxidation process is simulated with ATHENA and the deal-grove model is used for the oxide growth kinetics.

Keywords

crystallography; integrated circuits; nanoelectronics; oxidation; silicon; ATHENA; crystallographic plane orientation dependence simulation; deal-grove model; local oxidation of silicon; microscale structures; nanoscale structures; neighboring element isolation; oxide growth kinetics; poly-buffered; side wall masked isolation; stress; thermal oxidation; CMOS technology; Costs; Crystallography; Isolation technology; Oxidation; Silicon compounds; Silicon on insulator technology; Solids; Thermal stresses; Water; LOCOS; PBL; SWAMI; Simulation; crystallographic plane orientation; microelectronic; nanoelectronic; stress; thermal oxidation;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Technology Interfaces, 2007. ITI 2007. 29th International Conference on

Conference_Location

Cavtat

ISSN

1330-1012

Print_ISBN

953-7138-10-0

Electronic_ISBN

1330-1012

Type

conf

DOI

10.1109/ITI.2007.4283835

Filename

4283835