Title :
Oxidation Process and Different Crystallographic Plane Orientation Dependence Simulation in Micro and Nano Scale Structures
Author :
Andriukaitis, Darius ; Anilionis, Romualdas
Author_Institution :
Kaunas Univ. of Technol., Kaunas
Abstract :
Thermal oxidation is one of various methods used for neighboring element isolation. Problems of thermal oxidation, related with LOCOS, PBL and SWAMI technologies was researched. The main purpose of this paper is to present stress, which appears during thermal oxidation in micro and nano scales levels in mentioned above technologies. Also relationship between thermal oxidation and crystallographic planes orientation are analyzed, because growing oxide rate is different on surface and edges with the same crystallographic planes orientation. Thermal oxidation process is simulated with ATHENA and the deal-grove model is used for the oxide growth kinetics.
Keywords :
crystallography; integrated circuits; nanoelectronics; oxidation; silicon; ATHENA; crystallographic plane orientation dependence simulation; deal-grove model; local oxidation of silicon; microscale structures; nanoscale structures; neighboring element isolation; oxide growth kinetics; poly-buffered; side wall masked isolation; stress; thermal oxidation; CMOS technology; Costs; Crystallography; Isolation technology; Oxidation; Silicon compounds; Silicon on insulator technology; Solids; Thermal stresses; Water; LOCOS; PBL; SWAMI; Simulation; crystallographic plane orientation; microelectronic; nanoelectronic; stress; thermal oxidation;
Conference_Titel :
Information Technology Interfaces, 2007. ITI 2007. 29th International Conference on
Conference_Location :
Cavtat
Print_ISBN :
953-7138-10-0
Electronic_ISBN :
1330-1012
DOI :
10.1109/ITI.2007.4283835
