DocumentCode
3186742
Title
A low-power CMOS injection-locked frequency divider based on hybrid differential injection technique
Author
Huang, Fan-Hsiu ; Tsai, Meng-Hsiu ; Chang, Hong-Yeh ; Hsin, Yue-Ming
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
fYear
2009
fDate
7-10 Dec. 2009
Firstpage
301
Lastpage
304
Abstract
An injection-locked frequency divider (ILFD) designed for Ka-band millimeter-wave applications has been implemented in 0.18 ¿m CMOS process with a wide locking range and a low power consumption. Based on the circuit topology of the differential injection with combining the tail-and the direct injectors, the locking range can efficiently be enhanced. Comparing with the conventional ILFD circuits only using the tail- or the direct injection, the proposed ILFD exhibits a flat output power performance with a power consumption of 1.8 mW from a 1.8 V supply at 30 GHz. The measured maximum locking range is about 8.9 GHz ranging from 25.6 GHz to 34 GHz when the injection power level is 4 dBm. The locking range having a 3-dB power rolloff at outputs can also be achieved to 8 GHz ranging from 25.5 GHz to 33.5 GHz.
Keywords
CMOS integrated circuits; frequency dividers; injection locked amplifiers; power consumption; CMOS process; ILFD circuits; Ka-band millimeter-wave applications; frequency 8 GHz to 34 GHz; hybrid differential injection technique; low-power CMOS injection-locked frequency divider; power 1.8 mW; size 0.18 mum; voltage 1.8 V; Circuit simulation; Circuit topology; Degradation; Energy consumption; Frequency conversion; Injection-locked oscillators; Millimeter wave communication; Phased arrays; Power generation; Tail; CMOS; frequency divider; injection locking; wide locking range;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location
Singapore
Print_ISBN
978-1-4244-2801-4
Electronic_ISBN
978-1-4244-2802-1
Type
conf
DOI
10.1109/APMC.2009.5385393
Filename
5385393
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