An accurate analytical model of the AlGaAs/GaAs high electron mobility transistor (HEMT)

Author

Yakout, Mohamed A. ; AbdelRassoul, R.A. ; Abdelfattah, Abdelfattah I. ; Essa, Sahar G.

Author_Institution

Fac. of Eng., Mansoura Univ., Egypt

Volume

2

fYear

2001

fDate

2001

Firstpage

531

Abstract

A new and accurate analytical model for the AlGaAs/GaAs high electron mobility transistor (HEMT) or MODFET is presented. This model uses a polynomial expression to model the dependence of sheet carrier concentration (n₂) in the two-dimensional electron gas on gate voltage (V_G). It takes into account parasitic conduction in the AlGaAs layer by including a MESFET operation. It also includes the effects of the extrinsic source and drain resistances. Based on this model, analytical drain current-voltage equations suitable for computer simulation are derived. Calculated results show excellent agreement with measured characteristics, much closer than previous other models

Keywords

III-V semiconductors; aluminium compounds; carrier density; equivalent circuits; gallium arsenide; high electron mobility transistors; semiconductor device models; two-dimensional electron gas; 2DEG; AlGaAs layer; AlGaAs-GaAs; AlGaAs/GaAs HEMT; MESFET operation; MODFET; analytical model; drain current-voltage equations; extrinsic drain resistance; extrinsic source resistance; gate voltage; high electron mobility transistor; parasitic conduction; polynomial expression; sheet carrier concentration; two-dimensional electron gas; Analytical models; Computer simulation; Electrons; Equations; Gallium arsenide; HEMTs; MESFETs; MODFETs; Polynomials; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 2001. NRSC 2001. Proceedings of the Eighteenth National

Conference_Location

Mansoura

Print_ISBN

977-5031-68-0

Type

conf

DOI

10.1109/NRSC.2001.929413

Filename

929413