A receiver front-end design in 0.13 µm CMOS for multiband OFDM UWB system

Author

Park, Bonghyuk ; Lee, Kwangchun ; Choi, Sangsung

Author_Institution

ETRI, Daejeon, South Korea

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

241

Lastpage

244

Abstract

A fully integrated 0.13-μm CMOS receiver front-end for UWB applications is implemented. This receiver enables 8 bands of operation covering 3.1 to 9.0 GHz and consists of a zero-IF receive chain. The shunt-series feedback LNA provides a receiver noise figure of 7.1 to 9.5 dB over 6 GHz bandwidth. The mixer, based on folded-cascode topology, also implements a 3-stage variable gain amplifier and a 1-stage fixed gain amplifier. The average conversion gain and input P1dB are 67.3 dB and -25.4 dBm, respectively. Fabricated die has been bonded and packaged on PCB for measurement. The receiver front-end chip draws 48 mA from 1.2 V power supply.

Keywords

CMOS analogue integrated circuits; OFDM modulation; low noise amplifiers; microwave amplifiers; microwave mixers; microwave receivers; ultra wideband technology; 1-stage fixed gain amplifier; 3-stage variable gain amplifier; CMOS receiver front-end; PCB; current 48 mA; folded-cascode mixer; frequency 3.1 GHz to 9.0 GHz; multiband OFDM UWB system; noise figure 7.1 dB to 9.5 dB; shunt-series feedback LNA; size 0.13 μm; voltage 1.2 V; zero-IF receive chain; Bandwidth; Bonding; Feedback; Gain; Noise figure; OFDM; Packaging; Power supplies; Semiconductor device measurement; Topology; CMOS; UWB; low noise amplifier (LNA); mixer; programmable gain amplifier (PGA);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5385394

Filename

5385394