A 43 GHz-band balanced low-noise amplifier

Author

Ishizaki, M. ; Hamabe, Takashi ; Oohashi, Y. ; Asai, S. ; Kasuga, T. ; Miyazawa, K.

Author_Institution

Fujitsu Lab. Ltd., Kanagawa, Japan

fYear

1988

fDate

25-27 May 1988

Firstpage

461

Abstract

A description is given of a 43-GHz-band balanced low-noise amplifier using high-electron-mobility transistors (HEMTs) with a gate length of 0.25 mu m. To reduce the loss, a 3-dB hybrid circuit formed by waveguide branch lines was used for the input/output sections of the amplifier. The amplifier has a gain of 9 dB, a noise figure of 5 dB or less, and an input/output VSWR (virtual standing-wave ratio) of 1.5 or less from 40 to 45.5 GHz. It has a gain of 10 dB and a noise figure of 4.3 dB or less at -30 degrees C (ambient temperature).<>

Keywords

high electron mobility transistors; microwave amplifiers; microwave integrated circuits; -30 degC; 0.25 micron; 3-dB hybrid circuit; 4.3 dB; 40 to 45.5 GHz; 9 to 10 dB; EHF; HEMTs; MM-wave type; balanced low-noise amplifier; high-electron-mobility transistors; input/output sections; microwave amplifier; radioastronomical receiver; submicron gate length; waveguide branch lines; Equivalent circuits; Gain measurement; HEMTs; Loss measurement; Low-noise amplifiers; MODFETs; Noise figure; Observatories; Scattering parameters; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22074

Filename

22074