Title :
Network analysis approach to numerical a-Si TFT simulation
Author :
Tsai, Yao-Tsung ; Ke, Tien-Chi
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
This paper presents a network model for a-Si TFT two-dimensional numerical simulation. The Poisson´s and continuity equations are formulated into equivalent circuits so circuit elements such as voltage sources, resistors and capacitances can be used to implement the equations. Numerical simulation is a powerful tool for device research, but sometimes it is hard to implement. This method not only provides the availability to simulate semiconductor devices numerically by using circuit simulator, but also reduce the complexity of numerical simulation. In addition, using this method makes mixed-mode simulation between semiconductor device and external circuits: very easy. The simulation results which includes I-V, C-V and transient characteristics are all reasonable and satisfactory
Keywords :
amorphous semiconductors; elemental semiconductors; equivalent circuits; insulated gate field effect transistors; numerical analysis; semiconductor device models; silicon; thin film transistors; 2D numerical simulation; C-V characteristics; I-V characteristics; Poisson equation; Si; a-Si TFT model; circuit simulator; continuity equations; equivalent circuits; mixed-mode simulation; network model; numerical TFT simulation; semiconductor device; transient characteristics; Analytical models; Capacitance; Circuit simulation; Equivalent circuits; Numerical simulation; Poisson equations; Resistors; Semiconductor devices; Thin film transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642327
