Title :
Early voltage of SiGe heterojunction bipolar transistors
Author :
Yuan, J.S. ; Song, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
An analytical equation of the Early voltage, including the neutral-base recombination effect, is evaluated. The general analytical equation is valid for SiGe bipolar transistors with a flat, trapezoid, linear, or stepped Ge profile in the base. The present model predictions are compared with other published results and experimental data. The agreement between this work and experimental data is excellent. The analytical predictions without taking into account neutral-base recombination are overestimated. The model predictions, taking into account 100% neutral-base recombination, however, gives a fixed normalized Early voltage of 0.5, independent of Ge grading
Keywords :
Ge-Si alloys; electron-hole recombination; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; Early voltage; Ge profile; SiGe; SiGe HBT; analytical predictions; heterojunction bipolar transistors; model predictions; neutral-base recombination effect; Bipolar transistors; Current density; Electron emission; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Predictive models; Silicon germanium; Spontaneous emission; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642342
