Rad-hard successive detection microwave logarithmic amplifiers employing GaAs monolithic chips using heterojunction bipolar transistors

Author

Silverman, L. ; Kuenher, G. ; Jupina, M.

Author_Institution

Microwave/Antenna Div., AEL Industries Inc., Lansdale, PA, USA

fYear

1995

fDate

34899

Firstpage

71

Lastpage

77

Abstract

A successive detection monolithic amplifier was subjected to Co ₆₀ radiation in steps at 1 rad/sec silicon to a total dose of 10⁶ rad silicon. This paper shows the test results indicating that only 1.0-2.1% change in the linearity bias point and a 0.1 dB change in the compressed RF output power occurred

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; integrated circuit testing; radiation effects; radiation hardening (electronics); 1E6 rad; Co; Co₆₀ radiation; GaAs; GaAs monolithic chips; HBT MMIC; compressed RF output power; heterojunction bipolar transistors; linearity bias point; microwave logarithmic amplifiers; rad-hard amplifier; successive detection monolithic amplifier; Detectors; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Pulse amplifiers; Radiation hardening; Resistors; Silicon; Video compression; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE

Conference_Location

Madison, WI

Print_ISBN

0-7803-3100-1

Type

conf

DOI

10.1109/REDW.1995.483401

Filename

483401