Title :
Rad-hard successive detection microwave logarithmic amplifiers employing GaAs monolithic chips using heterojunction bipolar transistors
Author :
Silverman, L. ; Kuenher, G. ; Jupina, M.
Author_Institution :
Microwave/Antenna Div., AEL Industries Inc., Lansdale, PA, USA
Abstract :
A successive detection monolithic amplifier was subjected to Co 60 radiation in steps at 1 rad/sec silicon to a total dose of 106 rad silicon. This paper shows the test results indicating that only 1.0-2.1% change in the linearity bias point and a 0.1 dB change in the compressed RF output power occurred
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; integrated circuit testing; radiation effects; radiation hardening (electronics); 1E6 rad; Co; Co60 radiation; GaAs; GaAs monolithic chips; HBT MMIC; compressed RF output power; heterojunction bipolar transistors; linearity bias point; microwave logarithmic amplifiers; rad-hard amplifier; successive detection monolithic amplifier; Detectors; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Pulse amplifiers; Radiation hardening; Resistors; Silicon; Video compression; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE
Conference_Location :
Madison, WI
Print_ISBN :
0-7803-3100-1
DOI :
10.1109/REDW.1995.483401
