DocumentCode
3187171
Title
Low noise and high tolerance to radiation effects of complementary bipolar SOI IC technology
Author
Pawlikiewicz, A.H. ; Bishop, A. ; Jerome, R.
Author_Institution
United Technol. Microelectron. Center, Colorado Springs, CO, USA
fYear
1995
fDate
34899
Firstpage
78
Lastpage
84
Abstract
The 1/f noise performance of Advanced Complementary Bipolar Process from United Technologies (ACUTE) is presented as a function of a total dose, device geometry and polarity as well as bias condition during irradiation. The data shows a significant radiation tolerance and superior low noise as compared with a standard bipolar processes
Keywords
1/f noise; bipolar integrated circuits; integrated circuit noise; integrated circuit technology; radiation effects; radiation hardening (electronics); silicon-on-insulator; 1/f noise performance; ACUTE process; Si; bias condition; complementary bipolar SOI IC technology; device geometry; high tolerance; low noise performance; radiation effects; radiation tolerance; Bipolar integrated circuits; Cutoff frequency; Geometry; Integrated circuit noise; Measurement standards; Microelectronics; Noise measurement; Radiation effects; Springs; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE
Conference_Location
Madison, WI
Print_ISBN
0-7803-3100-1
Type
conf
DOI
10.1109/REDW.1995.483402
Filename
483402
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