Title :
Low noise and high tolerance to radiation effects of complementary bipolar SOI IC technology
Author :
Pawlikiewicz, A.H. ; Bishop, A. ; Jerome, R.
Author_Institution :
United Technol. Microelectron. Center, Colorado Springs, CO, USA
Abstract :
The 1/f noise performance of Advanced Complementary Bipolar Process from United Technologies (ACUTE) is presented as a function of a total dose, device geometry and polarity as well as bias condition during irradiation. The data shows a significant radiation tolerance and superior low noise as compared with a standard bipolar processes
Keywords :
1/f noise; bipolar integrated circuits; integrated circuit noise; integrated circuit technology; radiation effects; radiation hardening (electronics); silicon-on-insulator; 1/f noise performance; ACUTE process; Si; bias condition; complementary bipolar SOI IC technology; device geometry; high tolerance; low noise performance; radiation effects; radiation tolerance; Bipolar integrated circuits; Cutoff frequency; Geometry; Integrated circuit noise; Measurement standards; Microelectronics; Noise measurement; Radiation effects; Springs; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE
Conference_Location :
Madison, WI
Print_ISBN :
0-7803-3100-1
DOI :
10.1109/REDW.1995.483402
