DocumentCode :
3187178
Title :
Investigations of dose rate effects on CMOS submicronic technologies
Author :
Corbiere, Thierry ; Venturin, Jean Louis
Author_Institution :
MATRA MHS, Nantes, France
fYear :
1995
fDate :
34899
Firstpage :
85
Lastpage :
89
Abstract :
Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates which are far from the real conditions found in the natural space environment. When geostationary satellites experienced dose rate around 1 to 2 Krad(Si) per year, the dose rate recommended by the two major test procedures vary from 30 Rad(Si)/hour up to 300Krad(Si)/hour. One can think that those test conditions do not reflect the permanent effects that could occur during the lifetime of the mission. The objective of the study is to evaluate the dose rate effects on circuits representative of the MATRA MHS state-of-the-art CMOS technology used for space parts manufacturing and provide recommendations for future new CMOS technologies characterizations
Keywords :
CMOS integrated circuits; gamma-ray effects; radiation hardening (electronics); space vehicle electronics; CMOS submicron technologies; MATRA MHS; MOS circuits; cobalt 60 source; dose rate; geostationary satellite; space environment; total dose; CMOS technology; Circuit testing; Degradation; Life testing; MOS devices; Manufacturing; Radiation hardening; Satellites; Space technology; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE
Conference_Location :
Madison, WI
Print_ISBN :
0-7803-3100-1
Type :
conf
DOI :
10.1109/REDW.1995.483403
Filename :
483403
Link To Document :
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