Title :
Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.47 As HEMT
Author :
Zhang, X.H. ; Yang, Y.F. ; Wang, Z.G.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
A two-dimensional quantum model based on the solution of the Schrodinger and Poisson equations is first presented for an In0.52 Al0.48As/In0.53Ga0.47As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of the InAlAs/InGaAs HEMT are discussed
Keywords :
III-V semiconductors; aluminium compounds; electron density; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; 2D quantum model; HEMT model; In0.52Al0.48As-In0.53Ga0.47 As-InP; Poisson equation; Schrodinger equation; channel electron density; channel transverse electric field; two-dimensional distributions; two-dimensional numerical simulation; Carrier confinement; Electrons; Electrostatics; FETs; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Numerical simulation; Poisson equations; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642345
