Experimental modeling for millimeter-wave monolithic integrated circuit components

An accurate distributed model of monolithic metal-insulator-metal (MIM) capacitors has been developed for computer-aided design (CAD) of millimeter-wave monolithic integrated circuits at V-band. The model is based on experimental measurements on microstrip ring resonators with and without the air-bridges and capacitors. The effects due to the air-bridge discontinuity, as well as dielectric and ohmic losses are taken into account. The calculated resonant frequencies are in good agreement with the experiments. This capacitor model reduces discrepancy in the resonant frequency by more than 30% compared with that used in commercial available programs. The distributed model of the MIM capacitor was utilized in the simulation of the performance of a V-band two-stage low-noise high-electron-mobility transistor (HEMT) amplifier. Computer simulations obtained using this model are in good agreement with the measured performance.<>