A 94 GHz low noise GaAs FET oscillator using whispering-gallery dielectric resonator modes and a new push-push configuration reducing 1/f converted noise

Author

Bermudez, L.A. ; Guillon, P. ; Obregon, J. ; Bert, A.

Author_Institution

Univ. de Brasilia, Brazil

fYear

1988

fDate

25-27 May 1988

Firstpage

481

Abstract

Results obtained in the design of a 47-94 GHz GaAs MESFET oscillator-doubler using a dielectric resonator are presented. A push-push configuration was used for the generation of the fundamental frequency at 47 GHz in the FET drain at the output. This topology produces noiseless oscillators-doublers. Two versions of this circuit were manufactured: the first used a TE/sub 01 delta /-mode cylindrical dielectric resonator. The resonator dimensions were calculated by computer or a fundamental frequency at 47 GHz. The second used planar whispering-gallery modes. The results obtained from the prototypes are presented. It is felt these devices show promise for low-noise millimeter-wave use.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; dielectric resonators; gallium arsenide; microwave integrated circuits; microwave oscillators; 1/f converted noise; 47 to 94 GHz; Al/sub 2/O/sub 3/; EHF; FET oscillator; GaAs; MESFET; MIC; MM-wave type; TE/sub 01 delta /-mode; alumina substrate; cylindrical dielectric resonator; microwave IC; millimeter-wave; noise-reduction; noiseless oscillators-doublers; push-push configuration; whispering-gallery dielectric resonator modes; Circuit noise; Circuit topology; Dielectrics; FETs; Frequency; Gallium arsenide; MESFETs; Manufacturing; Oscillators; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22079

Filename

22079