Merged technology on MEMS

Author

Lee, Mike Myung-Ok

Author_Institution

Dept. of Inf. & Commun. Eng., Dongshin Univ., Chonnam, South Korea

fYear

1997

fDate

35672

Firstpage

128

Lastpage

135

Abstract

This study presents briefly the review for stress analyses for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from SOI (Silicon On Insulator) structures. This paper mainly presents the trends on current smart sensor for future MEMS chip and also demonstrates a way of integrating with calibration, gain stage and microcontroller unit plus high current/high voltage CMOS drivers onto three chip module, two chip module and monolithic chip for future automobile, industrial and medical MEMS products

Keywords

calibration; diaphragms; electric sensing devices; intelligent sensors; microsensors; piezoresistive devices; silicon-on-insulator; stress analysis; CMOS drivers; MEMS; MEMS chip; MEMS products; SOI structures; Si; calibration; gain stage; microcontroller unit; monolithic chip; output sensitivity; permissible diaphragm dimension; piezoresistive sensor theory; smart sensor; stress analyses; three chip module; two chip module; Automobiles; CMOS logic circuits; Calibration; Etching; Intelligent sensors; Mechanical sensors; Microcontrollers; Micromachining; Micromechanical devices; Piezoresistance; Residual stresses; Silicon; Silicon on insulator technology; Space technology; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642349

Filename

642349